Raman spectroscopy study of nano sheets of graphene and measurement of their resistivity

Graphene is a promising candidate for future high-speed electronics applications. It is a thin layer of pure carbon in which every atom is available for chemical reaction from two sides (due to the 2D structure). This is the only form of carbon (or solid material) with this characteristic feature. Graphene oxide (GO) was synthesized through the oxidation of graphite using the Hummer’s method, in which a long oxidation time was combined with a highly effective method for purifying the reaction products. To reduce GO, after the addition of ascorbic acid, the sample was thermally annealed. To verify the structure of GO and G, the transmission electron microscopy images as well as Raman spectra of the samples were obtained. The thickness of the graphene layer was obtained by optical measurement and used to calculate the resistivity of graphene. Rama results showed the D (distorted) mode shifted towards the higher wavenumbers, whereas the G mode shifted towards the lower wavenumbers, with an increase in intensity after the reduction of graphene oxide to graphene.